lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? description the lx5512e is a power amplifier optimized for wlan applications in the 2.4-2.5 ghz frequency range. the pa is implemented as a three-stage monolithic microwave integrated circuit (mmic) with active bias and input/output pre-matching. the device is manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) ic process (mocvd). it operates at a single low voltage supply of 3.3v with 34 db power gain between 2.4-2.5ghz, at a low quiescent current of 50 ma. for 19dbm ofdm output power (64qam, 54mbps), the pa provides a low evm (error-vector magnitude) of 3 %, and consumes 130 ma total dc current. the lx5512e is ava ilable in a 16-pin 3mmx3mm micro-lead package (mlp). the compact footprint, low profile, and excellent thermal capability of the mlp package makes the lx5512e an ideal solution for high-gain power amplifier requirements for ieee 802.11b/g applications . important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features ? advanced ingap hbt ? 2.4 ? 2.5ghz operation ? single-polarity 3.3v supply ? low quiescent current icq ~50ma ? power gain ~34db @ 2.45ghz and pout = 19dbm ? total current 130ma for pout = 19dbm @ 2.45ghz ofdm ? evm ~ 3.0% for 64qam / 54mbps and pout = 19dbm ? small footprint (3 x 3 mm 2 ) ? low profile (0.9mm) applications ? ieee 802.11b/g product highlight package order info lq plastic mlpq 16 pin lx5512e-lq note: available in tape & reel. append the letter ?t? to the part number. (i.e. lx5512e-lqt) l l x x 5 5 5 5 1 1 2 2 e e
lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? absolute maximum ratings dc supply voltage, rf off ...............................................................................6v collector current ........................................................................................400ma total power di ssipation....................................................................................2w rf input power............................................................................................. 5dbm operation ambient temper ature ...................................................-40 c to +85c storage temperature ....................................................................-60c to +150c note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal . thermal data lq plastic mlpq 16-pin thermal resistance - junction to c ase , jc 10 c/w thermal resistance - junction to a mbient , ja 50 c/w package pin out rf in rf in vb2 vb3 vc1 rf out rf out vc2 vc3 * 1 2 3 4 5 6 7 8 9 1 0 11 12 1 3 14 15 16 * pad is ground det pwr det ref vcc vb1 gnd gnd gnd lq p ackage (bottom view) functional pin description name description rf in rf input for the power amplifier. this pin is dc-shorte d to gnd but ac-coupled to the transistor base of the first stage. vb1 bias current control voltage for the first stage. vb2 bias current control voltage for the second stage vb3 bias current control voltage for t he third stage. the vb3 pin can be co nnected with the first and second stage control voltage (vb1,vb2) into a single reference volt age (referred to as vref) through an external resistor bridge. vcc supply voltage for the bias reference and control circuits. the vcc feed line should be terminated with a 10 nf bypass capacitor close to connector pin. this pin can be combined with vc1, vc2 and vc3 pins, resulting in a single supply voltage (referred to as vc). rf out rf output for the power amplifier. this pin is dc- decoupled from the transistor collector of the third stage.. vc1 power supply for first stage amplifier. the vc1 feedlin e should be terminated with a 120pf bypass capacitor, followed by a 10 ohm resistor vc2 power supply for second stage amplifier. the vc2 feedline should be terminated with a 47 pf bypass capacitor, followed by a 5 ohm resistor vc3 power supply for the third stage amplifier. the vc3 feedline should be terminated with a 120 pf bypass capacitor. this pin can be combined with vc1,vc2 and vcc pins, resulting in a single supply voltage (referred to as vc det_ref power detector reference output pin should be terminated with a 100 kohm loading resistor det_pwr power detector output-coupled pin should be terminated with a 100 kohm loading resistor gnd the center metal base of the mlp package provides both dc and rf ground as well as heat sink for the power amplifier.. p p a a c c k k a a g g e e d d a a t t a a
lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? electrical characteristics unless otherwise specified, the following specificati ons apply over the operat ing ambient temperature 0 c t a 70 c except where otherwise noted and the following test conditi ons: vc = 3.3v, vref = 2.9v, icq = 50ma, t a = 25c lx5512e parameter symbol test conditions min typ max units frequency range f 2.4 2.5 ghz power gain at pout = 19dbm gp 34 db evm at pout = 19dbm 64gqam / 54mbps 3.0 % total current at pout = 19dbm ic_total 130 ma quiescent current icq 50 ma bias control reference current iref for icq = 50ma 1.6 ma small-signal gain s21 34 db gain flatness ? s21 over 100mhz 1.5 db gain variation over temperature ? s21 0c to +70c 1.5 db input return loss s11 8 db output return loss s22 10 db reverse isolation s12 -50 db second harmonic pout = 19dbm -40 dbc third harmonic pout = 19dbm -40 dbc total current at pout=23dbm 11 mbps cck 200 ma 2 nd side lobe at 23 dbm 11 mbps cck -50 dbc ramp-on time t on 10 ~ 90% 100 ns differential detector response 19 dbm ofdm, 100kohm?s 1.5 v note: all measured data was obtained on a 10 m il getek evaluation board without heat sink. e e l l e e c c t t r r i i c c a a l l s s
lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? characteristic curves m1 freq=2.400ghz db(s(2,1))=35.376 m7 freq=2.500ghz db(s(2,1))=33.462 2.22.42.62.8 2.0 3.0 -40 -30 -20 -10 0 10 20 30 40 -50 50 freq, ghz db(s(1,2)) db(s(2,1)) m1 m7 db(s(1,1)) db(s(2,2)) figure 1 ? s-parameter (vc = 3.3v, vref = 2.9v, icq = 50ma) 0 1 2 3 4 5 6 7 0 2 4 6 8 10121416182022 output power /[dbm] evm_pa /[% ] 2.4 ghz 2.45 ghz 2.5 ghz figure 2 ? evm with 54mb/s 64 qam ofdm (vc = 3.3v, vref = 2.9v, icq = 50ma) g g r r a a p p h h s s
lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? characteristic curves -60 -57.5 -55 -52.5 -50 -47.5 -45 0 2 4 6 8 10121416182022 output power /[dbm] acp_30 mhz /[dbc] 2.4 ghz 2.45 ghz 2.5 ghz figure 3 ? acp with 54mb/s 64 qam ofdm (vc = 3.3v, vref = 2.9v, icq = 50ma) 50 75 100 125 150 175 0 2 4 6 8 10121416182022 output power /[dbm] current_3.3v /ma 2.4 ghz 2.45 ghz 2.5 ghz figure 4 ? current with 54mb/s 64 qam ofdm (vc = 3.3v, vref = 2.9v, icq = 50ma) g g r r a a p p h h s s
lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 6 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? characteristic curves figure 5 ? spectrum with 23dbm 11mb/s cck (vc = 3.3v, vref = 2.9v, icq = 50ma, ic = 202ma, frequency = 2.45ghz) m1 freq=2.400ghz db(s(2,1))=35.911 m7 freq=2.500ghz db(s(2,1))=34.020 2.2 2.4 2.6 2.8 2.0 3.0 -40 -30 -20 -10 0 10 20 30 40 -50 50 freq, ghz db(s(1,2)) db(s(2,1)) m1 m7 db(s(1,1)) db(s(2,2)) figure 6 ? s-parameter (vc = 5.0v, vref = 2.9v, icq = 55ma) g g r r a a p p h h s s
lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 7 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? characteristic curves 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 18 20 22 24 output power /[dbm] evm_pa /[% ] 2.4 ghz 2.45 ghz 2.5 ghz figure 7 ? evm with 54mb/s 64qam ofdm (vc = 5v, vref = 2.9v, icq =55ma,) -60 -57.5 -55 -52.5 -50 -47.5 -45 0 2 4 6 8 1012141618202224 output power /[dbm] acp_30 mhz /[dbc] 2.4 ghz 2.45 ghz 2.5 ghz figure 8 ? acp data with 54mb/s 64 qam ofdm (vc = 5v, vref = 2.9v, icq = 55ma) g g r r a a p p h h s s
lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 8 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? characteristic curves 50 75 100 125 150 175 200 225 0 2 4 6 8 10 12 14 16 18 20 22 24 output power /[dbm] current_5.0v /ma 2.4 ghz 2.45 ghz 2.5 ghz figure 9 ? current with 54mb/s 64 qam ofdm (vc = 5.0v, vref = 2.9v, icq = 55ma) figure 10 ? spectrum with 25dbm 11mb/s cck (vc = 5v, vref = 2.9v, icq = 55m a, ic = 258ma, frequency = 2.45ghz) g g r r a a p p h h s s
lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 10 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? package dimensions lq 16-pin mlpq 3x3 (67x67 mil dap) e d e b e2 d2 a a3 a1 l k m illimeters i nches dim min max min max a 0.80 1.00 0.031 0.039 a1 0 0.05 0 0.002 a3 0.20 ref 0.008 ref b 0.18 0.30 0.007 0.012 d 3.00 bsc 0.118 bsc e 3.00 bsc 0.118 bsc e 0.50 bsc 0.020 bsc d2 1.30 1.55 0.051 0.061 e2 1.30 1.55 0.051 0.061 k 0.2 - 0.008 - l 0.35 0.50 0.012 0.020 note: 1. dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006?) on any side. lead dimension shall not include solder coverage. m m e e c c h h a a n n i i c c a a l l s s
lx5512e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 11 copyright ? 2000 rev. 1.2, 2004-01-16 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? notes production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. n n o o t t e e s s
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